A 25 NS 64K STATIC RAM

被引：3

作者：

YAMANAKA, T ^{[1
]}

KOSHIMARU, S ^{[1
]}

KUDOH, O ^{[1
]}

OZAWA, Y ^{[1
]}

YASUOKA, N ^{[1
]}

ITO, H ^{[1
]}

ASAI, H ^{[1
]}

HARASHIMA, N ^{[1
]}

KIKUCHI, S ^{[1
]}

机构：

[1] NEC IC MICROCOMP SYST LTD,KAWASAKI,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1984年 / 19卷 / 05期

关键词：

D O I：

10.1109/JSSC.1984.1052191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：572 / 577

页数：6

共 11 条

[1]

AMAZAWA A, 1983, 15TH C SOL STAT DEV, P229

[2]

BABA T, 1982, NOV EL COMM ENG C, V82

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) :437-440

[4] A FAULT-TOLERANT 30 NS-375 MW 16KX1 NMOS STATIC RAM [J].

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SUD, R .

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[5]

ISOBE M, 1981, FEB ISSCC, P12

[6]

KAZIO T, 1983, FEB ISSCC, P66

[7]

KUME H, 1983, 15 C SOL STAT DEV MA, P221

[8]

OZAWA T, 1982, NOV EL COMM ENG C, V82, P39

[9]

TUJIDE T, 1981, FEB ISSCC, P20

[10] A BATTERY BACKUP 64K CMOS RAM WITH DOUBLE-LEVEL ALUMINUM TECHNOLOGY [J].

WATANABE, T ;

HAYASI, M ;

SASAKI, I ;

AKATSUKA, Y ;

TSUJIDE, T ;

YAMAMOTO, H ;

KUDOH, O ;

TAKAHASHI, S ;

HARA, T .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) :494-498

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