A 90 NS 256KX1-BIT DRAM WITH DOUBLE-LEVEL AL TECHNOLOGY

被引：2

作者：

FUJII, T

MITAKE, K

TADA, K

INOUW, Y

WATANABE, H

KUDOH, O

YAMAMOTO, H

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1983年 / 18卷 / 05期

关键词：

D O I：

10.1109/JSSC.1983.1051974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：437 / 440

页数：4

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