EFFECTS OF BASE GEOMETRY ON VOLUME RECOMBINATION IN TRANSISTOR BASE AND ON TRANSISTOR CURRENT GAIN FACTOR

被引：3

作者：

ACHUTHAN, MK ^{[1
]}

BHAT, KN ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,MADRAS 36,INDIA

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1974年 / 37卷 / 02期

关键词：

D O I：

10.1080/00207217408900511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：177 / 197

页数：21

共 15 条

[1]

ACHUTHAN MK, 1972, INT J ELECTRON, V32, P513

[2]

BARDEEN J, 1953, BELL SYST TECH J, V32, P1

[3]

BENNY AH, 1953, P PHYS SOC, V72, P1007

[4] 3-DIMENSIONAL SMALL-SIGNAL ANALYSIS OF BIPOLAR TRANSISTORS [J].

BLUE, JL .

BELL SYSTEM TECHNICAL JOURNAL, 1972, 51 (04) :889-+

[5]

COLLINS TW, 1969, TR02461 IBM TECHN RE

[6] SURFACE RECOMBINATION IN SEMICONDUCTORS [J].

FITZGERALD, DJ ;

GROVE, AS .

SURFACE SCIENCE, 1968, 9 (02) :347-+

[7] VOLUME AND SURFACE RECOMBINATION RATES FOR INJECTED CARRIERS IN GERMANIUM [J].

MCKELVEY, JP ;

LONGINI, RL .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (05) :634-641

[8] THE EFFECT OF JUNCTION SHAPE AND SURFACE RECOMBINATION ON TRANSISTOR CURRENT GAIN [J].

MOORE, AR ;

PANKOVE, JI .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (06) :907-913

[9] 2-DIMENSIONAL CURRENT FLOW IN JUNCTION TRANSISTORS AT HIGH FREQUENCIES [J].

PRITCHARD, RL .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1152-1160

[10] TRANSISTOR CUTOFF FREQUENCY FALLOFF AT HIGH CURRENTS [J].

REY, G .

SOLID-STATE ELECTRONICS, 1971, 14 (12) :1333-+

← 1 2 →