EPITAXIAL GROWTH OF SILICON AND GERMANIUM (2)

[1] AKERMAN K, 1963, NUKLEONIKA, V7, P635

[2] THICKNESS MEASUREMENT OF EPITAXIAL FILMS BY THE INFRARED INTERFERENCE METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : 709 - 713

[3] ALLEGRETTI JC, 1961, AIME MET SOC C, V12, P255

[4] AN AC SILICON RESISTIVITY METER [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (07) : 824 - &

[5] ALLEN CC, 1962, AIME MET SOC C, V15, P113

[6] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[7] AMICK JA, 1963, RCA REV, V24, P473

[8] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[9] ARIZUMI T, 1963, JPN J APPL PHYS, V2, P143

[10] BARDSLEY CW, 1960, PROGRESS SEMICONDUCT, V4, P155

[1] AKERMAN K, 1963, NUKLEONIKA, V7, P635

[2] THICKNESS MEASUREMENT OF EPITAXIAL FILMS BY THE INFRARED INTERFERENCE METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : 709 - 713

[3] ALLEGRETTI JC, 1961, AIME MET SOC C, V12, P255

[4] AN AC SILICON RESISTIVITY METER [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (07) : 824 - &

[5] ALLEN CC, 1962, AIME MET SOC C, V15, P113

[6] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[7] AMICK JA, 1963, RCA REV, V24, P473

[8] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[9] ARIZUMI T, 1963, JPN J APPL PHYS, V2, P143

[10] BARDSLEY CW, 1960, PROGRESS SEMICONDUCT, V4, P155