BE-IMPLANTED PARA-NORMAL JUNCTIONS IN GA0.47IN0.53AS

被引：10

作者：

VESCAN, L

SELDERS, J

KRAUTLE, H

KUTT, W

BENEKING, H

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 12期

关键词：

D O I：

10.1049/el:19820361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：533 / 534

页数：2

共 9 条

[1] P-N-JUNCTION DIODES IN INP AND IN1-XGAXASYP1-Y FABRICATED BY BERYLLIUM-ION IMPLANTATION [J].

ARMIENTO, CA ;

DONNELLY, JP ;

GROVES, SH .

APPLIED PHYSICS LETTERS, 1979, 34 (03) :229-231

[2]

CHO AY, 1981, P IEDM, P96

[3] P-N-JUNCTION FORMATION IN N-ALGAAS BY BERYLLIUM ION-IMPLANTATION [J].

COMAS, J ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :989-991

[4] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :110-111

[5] ZN-DIFFUSED IN0.53GA0.47AS-INP AVALANCHE PHOTODETECTOR [J].

MATSUSHIMA, Y ;

SAKAI, K ;

AKIBA, S ;

YAMAMOTO, T .

APPLIED PHYSICS LETTERS, 1979, 35 (06) :466-468

[6] LOW-LEAKAGE, HIGH-EFFICIENCY, RELIABLE VPE INGAAS 1.0-1.7 MU-M PHOTO-DIODES [J].

OLSEN, GH .

ELECTRON DEVICE LETTERS, 1981, 2 (09) :217-219

[7] GA0.47IN0.53AS HOMOJUNCTION PHOTO-DIODE - NEW AVALANCHE PHOTODETECTOR IN NEAR-INFRARED BETWEEN 1.0 AND 1.6 MU-M [J].

PEARSALL, TP ;

PAPUCHON, M .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :640-642

[8]

RYSSEL H, 1978, IONENENIMPLANTATION, P320

[9]

ZOLCH R, 1977, P INT C ION IMPLANTA, P593

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