ELECTRON-IRRADIATION DEFECTS IN INP

[1] ARNOLD GW, 1968, RAD EFFECTS SEMICOND, P435

[2] MOBILITY OF RADIATION-INDUCED DEFECTS IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) : 653 - &

[3] BRAILOVSKII EY, 1982, PHYS STATUS SOLIDI A, V71, P563, DOI 10.1002/pssa.2210710232

[4] ELECTRON-IRRADIATION EFFECT ON EMISSION BAND ASSOCIATED WITH CARBON ACCEPTORS IN N-GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : 795 - 796

[5] KIMERLING LC, 1979, I PHYS C SER, V46, P56

[6] Lang D. V., 1977, I PHYS C SER, V31, P70

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[8] LELOUP J, 1977, I PHYS C SER, V31, P373

[9] LEVINSON M, 1982, APPL PHYS LETT, V40

[10] LEVINSON M, 1982, ELECTRONIC MATERIALS

[1] ARNOLD GW, 1968, RAD EFFECTS SEMICOND, P435

[2] MOBILITY OF RADIATION-INDUCED DEFECTS IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) : 653 - &

[3] BRAILOVSKII EY, 1982, PHYS STATUS SOLIDI A, V71, P563, DOI 10.1002/pssa.2210710232

[4] ELECTRON-IRRADIATION EFFECT ON EMISSION BAND ASSOCIATED WITH CARBON ACCEPTORS IN N-GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : 795 - 796

[5] KIMERLING LC, 1979, I PHYS C SER, V46, P56

[6] Lang D. V., 1977, I PHYS C SER, V31, P70

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[8] LELOUP J, 1977, I PHYS C SER, V31, P373

[9] LEVINSON M, 1982, APPL PHYS LETT, V40

[10] LEVINSON M, 1982, ELECTRONIC MATERIALS