2-JUNCTION CASCADE SOLAR-CELL INCORPORATING A HIGH-CONDUCTANCE,MOCVD-GROWN INTERCONNECTING JUNCTION

被引:2
作者
LEWIS, CR
GREEN, RT
机构
关键词
D O I
10.1049/el:19850789
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1111 / 1112
页数:2
相关论文
共 6 条
[1]   2-JUNCTION CASCADE SOLAR-CELL STRUCTURE [J].
BEDAIR, SM ;
LAMORTE, MF ;
HAUSER, JR .
APPLIED PHYSICS LETTERS, 1979, 34 (01) :38-39
[2]  
BLAKESLEE AE, 1981, Patent No. 4278474
[3]  
Fraas L. M., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P1353
[4]   THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESS [J].
LEWIS, CR ;
DIETZE, WT ;
LUDOWISE, MJ .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) :507-524
[5]   HIGH-EFFICIENCY (21.4-PERCENT) GA0.75IN0.25AS/GAAS(EG = 1.15 EV) CONCENTRATOR SOLAR-CELLS AND THE INFLUENCE OF LATTICE MISMATCH ON PERFORMANCE [J].
LUDOWISE, MJ ;
DIETZE, WT ;
BOETTCHER, R ;
KAMINAR, N .
APPLIED PHYSICS LETTERS, 1983, 43 (05) :468-470
[6]   GAAS-ALGAAS TUNNEL-JUNCTIONS FOR MULTIGAP CASCADE SOLAR-CELLS [J].
MILLER, DL ;
ZEHR, SW ;
HARRIS, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :744-748