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STOICHIOMETRY EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION AND TRANSPORT STUDIES OF TI1+XS2
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SEMIMETALLIC CHARACTER OF TISE2 AND SEMICONDUCTOR CHARACTER OF TIS2 UNDER PRESSURE
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HIGH-PRESSURE TRANSPORT-PROPERTIES OF TIS2 AND TISE2
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1982, 15 (10)
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SIMPLE CLAMP PRESSURE CELL UP TO 30-KBAR
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REVIEW OF SCIENTIFIC INSTRUMENTS,
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BAND-STRUCTURE OF GROUP-IVA TRANSITION-METAL DICHALCOGENIDES
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1979, 12 (16)
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NEW MECHANISM FOR THE ELECTRICAL-RESISTIVITY OF LAYER COMPOUNDS - TIS2
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
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STOICHIOMETRY DEPENDENCE OF THE TRANSPORT-PROPERTIES OF TIS2
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1981, 14 (28)
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