INTERLEAVED-CONTACT ELECTROABSORPTION MODULATOR USING DOPING-SELECTIVE ELECTRODES WITH 25-DEGREES-C TO 95-DEGREES-C OPERATING RANGE

We demonstrate a multiple-quantum-well (MQW) modulator with multiple stacked p-i(MQW)-n-i(MQW)-p-regions. Electrodes are deposited such that all the n-layers are connected to one contact and all the p-layers to the other. This allows high fields to be produced in the i-regions with relatively low voltages, since the i-regions may be made thin while retaining large optical interaction because they are stacked. Because of large Stark shifts in the MQW's at high fields, we obtain a large usable wavelength range which translates into a large operating temperature range. For a 0 to 6 V swing we achieve > 22% reflectivity change from 25-degrees-C to 95-degrees-C, or alternatively over a wavelength range of 15 nm at 25-degrees-C.