GAAS-ALAS LOW-VOLTAGE REFRACTIVE MODULATOR OPERATING AT 1.06 MU-M

被引：15

作者：

GOOSSEN, KW

CUNNINGHAM, JE

JAN, WY

机构：

[1] AT and T Bell Laboratories, Holmdel

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.103432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have produced a nonabsorbing surface-normal optical modulator operating at 1.06 μm (e.g., for a high-power Nd-YAG pump laser) which has a relative transmission change of 16% for -1 to 1 voltage swing. The structure is a GaAs-AlAs dielectric mirror with alternating n- and p-type δ doping at each interface. Doping selective contacts are made to the sample so that an applied voltage appears equally across each period of the device, yielding a strong field which changes the index of the GaAs and hence shifts the mirror.

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页码：744 / 746

页数：3

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