TUNABLE ELECTROABSORPTION IN GALLIUM-ARSENIDE DOPING SUPERLATTICES

被引：18

作者：

CHANGHASNAIN, CJ ^{[1
]}

HASNAIN, G ^{[1
]}

JOHNSON, NM ^{[1
]}

DOHLER, GH ^{[1
]}

MILLER, JN ^{[1
]}

WHINNERY, JR ^{[1
]}

DIENES, A ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 14期

关键词：

D O I：

10.1063/1.98031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：915 / 917

页数：3

共 7 条

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[3]

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[4]

FRANZ W, 1958, SOV PHYS JETP, V7, P788

[5] OPTICALLY INDUCED ABSORPTION MODULATION IN GAAS DOPING SUPERLATTICES [J].

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AUCOIN, TR .

APPLIED PHYSICS LETTERS, 1986, 49 (10) :590-592

[6] STRONG POLARIZATION-SENSITIVE ELECTROABSORPTION IN GAAS/ALGAAS QUANTUM WELL WAVE-GUIDES [J].

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APPLIED PHYSICS LETTERS, 1985, 47 (11) :1148-1150

[7] HIGH-SPEED OPTICAL MODULATION WITH GAAS/GAALAS QUANTUM WELLS IN A P-I-N-DIODE STRUCTURE [J].