ON ELECTRONIC CONDUCTION OF ALPHA-SIC CRYSTALS BETWEEN 300 AND 1500 DEGREES K

[1] ON CHANGE OF ACTIVATION ENERGY WITH IMPURITY CONCENTRATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (503): : 716 - &

[2] BIRMAN JL, 1960, 1959 P C SIL CARB BO, P257

[3] BOER JHD, 1935, PHYSICA, V2, P186

[4] BRAUN A, 1942, HELV PHYS ACTA, V15, P571

[5] BROOKS H, 1955, ADV ELECTRON, V7, P157

[6] BUSCH G, 1946, HELV PHYS ACTA, V19, P463

[7] BUSCH G, 1946, HELV PHYS ACTA, V19, P167

[8] Castellan G. W., 1951, SEMICONDUCTING MATER, P8

[9] CHETKAROV ML, 1958, SOV PHYS-TECH PHYS, V3, P895

[10] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[1] ON CHANGE OF ACTIVATION ENERGY WITH IMPURITY CONCENTRATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (503): : 716 - &

[2] BIRMAN JL, 1960, 1959 P C SIL CARB BO, P257

[3] BOER JHD, 1935, PHYSICA, V2, P186

[4] BRAUN A, 1942, HELV PHYS ACTA, V15, P571

[5] BROOKS H, 1955, ADV ELECTRON, V7, P157

[6] BUSCH G, 1946, HELV PHYS ACTA, V19, P463

[7] BUSCH G, 1946, HELV PHYS ACTA, V19, P167

[8] Castellan G. W., 1951, SEMICONDUCTING MATER, P8

[9] CHETKAROV ML, 1958, SOV PHYS-TECH PHYS, V3, P895

[10] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706