ON CHANGE OF ACTIVATION ENERGY WITH IMPURITY CONCENTRATION IN SEMICONDUCTORS

被引：12

作者：

BARNES, JF

TREDGOLD, RH

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1961年 / 78卷 / 503期

关键词：

D O I：

10.1088/0370-1328/78/5/310

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：716 / &

共 17 条

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DONOVAN, R ;

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[3]

BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[4] IMPURITY CONDUCTION IN INDIUM-DOPED GERMANIUM [J].

BLAKEMORE, JS .

PHILOSOPHICAL MAGAZINE, 1959, 4 (41) :560-576

[5]

CASTELLAN GW, 1951, SEMICONDUCTING MATER

[6] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J].

CONWELL, EM .

PHYSICAL REVIEW, 1956, 103 (01) :51-60

[7]

Coulson CA, 1942, P CAMB PHILOS SOC, V38, P210

[8] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

PHYSICAL REVIEW, 1954, 93 (04) :693-706

[9] The normal state of the hydrogen molecule-ion [J].

Dickinson, BN .

JOURNAL OF CHEMICAL PHYSICS, 1933, 1 (05) :317-318

[10] ENERGY STATES OF OVERLAPPING IMPURITY CARRIERS IN SEMICONDUCTORS [J].

ERGINSOY, C .

PHYSICAL REVIEW, 1952, 88 (04) :893-894

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