ON CHANGE OF ACTIVATION ENERGY WITH IMPURITY CONCENTRATION IN SEMICONDUCTORS

被引：12

作者：

BARNES, JF

TREDGOLD, RH

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1961年 / 78卷 / 503期

关键词：

D O I：

10.1088/0370-1328/78/5/310

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：716 / &

共 17 条

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[12]

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[13] INTERACTION OF IMPURITIES AND MOBILE CARRIERS IN SEMICONDUCTORS [J].

LEHMAN, GW ;

JAMES, HM .

PHYSICAL REVIEW, 1955, 100 (06) :1698-1712

[14] ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORS [J].

MOTT, NF .

PEARSON, GL ;

BARDEEN, J .

PHYSICAL REVIEW, 1949, 75 (05) :865-883

PINCHERLE, L .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1951, 64 (379) :663-664

[17]

Sugiura Y., 1927, Z PHYS, V45, P484