IMPLICATIONS OF VELOCITY OVERSHOOT IN HETEROJUNCTION TRANSIT-TIME DIODES

被引：5

作者：

BLAKEY, PA

EAST, JR

ELTA, ME

HADDAD, GI

机构：

来源：

关键词：

D O I：

10.1049/el:19830347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：510 / 512

页数：3

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[2]

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[3]

GLISSON TH, 1982, VLSI ELECTRONICS MIC, V4, pCH3

[4]

HICKS HGB, 1972, 2ND P EUR SOL STAT D, P197

[5]

HOKE WE, 1980 INT EL DEV M TE, P452

[6] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

[7]

KUVAS RL, 1977, 6TH P BIENN CORN EL, P247

[8]

MALIK RJ, 1981, 8TH P BIENN CORN EL, P87

MALONEY, TJ ;

FREY, J .

[10]

NAMORDI MR, 1979, IEEE T ELECTRON DEV, V26, P1074, DOI 10.1109/T-ED.1979.19548