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DOUBLE-VELOCITY IMPATT DIODES

被引：7
作者：
ADLERSTEIN, MG
STATZ, H
机构：
[1] Research Division, Raytheon Company, Waltham
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 05期
关键词：
D O I：
10.1109/T-ED.1979.19502
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new IMPATT diode structure is proposed. The device incorporates a heterojunction between materials having different electric field saturated carrier velocities. Analysis shows that such a diode can have significantly higher dc-to-microwave-power conversion efficiencies than conventional Read IMPATT diodes. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
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页码：817 / 819
页数：3
相关论文
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