TRANSIT-TIME-INDUCED MICROWAVE NEGATIVE-RESISTANCE IN GA1-XALXAS-GAAS HETEROSTRUCTURE DIODES

被引：15

作者：

SITCH, JE ^{[1
]}

MAJERFELD, A ^{[1
]}

ROBSON, PN ^{[1
]}

HASEGAWA, F ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,MAPPIN ST,SHEFFIELD S1 3JD,ENGLAND

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 19期

关键词：

D O I：

10.1049/el:19750351

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：457 / 458

页数：2

共 8 条

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APPLIED PHYSICS LETTERS, 1971, 18 (01) :28-+

[2] CALCULATION OF HOT ELECTRON DIFFUSION RATE FOR GAAS [J].

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PEARSON, GL .

APPLIED PHYSICS LETTERS, 1974, 25 (10) :570-572

[4] HIGH-FIELD DIFFUSIVITY OF ELECTRONS IN SILICON [J].

PERSKY, G ;

BARTELINK, DJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4414-+

[5] LOW-NOISE MICROWAVE AMPLIFICATION USING TRANSFERRED-ELECTRON AND BARITT DEVICES [J].

ROBSON, PN .

RADIO AND ELECTRONIC ENGINEER, 1974, 44 (10) :553-567

[6] DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON [J].

SIGMON, TW ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :320-&

[7] COMPUTER MODELING OF LOW-NOISE INDIUM-PHOSPHIDE AMPLIFIERS [J].

SITCH, JE .

ELECTRONICS LETTERS, 1974, 10 (06) :74-75

[8] TRANSIT-TIME OSCILLATOR WITH VELOCITY-LIMITED INJECTION [J].

WRIGHT, GT .

ELECTRONICS LETTERS, 1971, 7 (16) :449-&

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