LOW-NOISE MICROWAVE AMPLIFICATION USING TRANSFERRED-ELECTRON AND BARITT DEVICES

被引：9

作者：

ROBSON, PN ^{[1
]}

机构：

[1] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, MAPPIN ST, SHEFFIELD S1 3JD, ENGLAND

来源：

RADIO AND ELECTRONIC ENGINEER | 1974年 / 44卷 / 10期

关键词：

D O I：

10.1049/ree.1974.0133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：553 / 567

页数：15

共 24 条

[1] GAIN AND NOISE FIGURE OF GAAS TRANSFERRED-ELECTRON AMPLIFIERS AT 34GHZ [J].

BASKARAN, S ;

ROBSON, PN .

ELECTRONICS LETTERS, 1972, 8 (05) :109-+

[2] NOISE PERFORMANCE OF INP REFLECTION AMPLIFIERS IN Q BAND [J].

BASKARAN, S ;

ROBSON, PN .

ELECTRONICS LETTERS, 1972, 8 (05) :137-&

[3] SMALL-SIGNAL NOISE BEHAVIOR OF COMPANION P+-N-P+ AND P+-N-V-P+ PUNCHTHROUGH MICROWAVE DIODES [J].

BJORKMAN, G ;

SNAPP, CP .

ELECTRONICS LETTERS, 1972, 8 (20) :501-&

[4] LOW-NOISE WIDEBAND INDIUM-PHOSPHIDE TRANSFERRED-ELECTRON AMPLIFIERS [J].

BRADDOCK, PW ;

GRAY, KW .

ELECTRONICS LETTERS, 1973, 9 (02) :36-37

[5]

BRADDOCK PW, 1973, P EUROPEAN MICROWAVE, V1

[6]

BULMAN PJ, 1972, TRANSFERRED ELECTRON

[7]

Coleman D. J. Jr., 1971, Bell System Technical Journal, V50, P1695

[8]

CONLON RFB, 1973, P EUROPEAN MICROWAVE, V1

[9] CALCULATION OF HOT ELECTRON DIFFUSION RATE FOR GAAS [J].

FAWCETT, W ;

REES, HD .

PHYSICS LETTERS A, 1969, A 29 (10) :578-&

[10] HIGH-FIELD TRANSPORT IN INDIUM PHOSPHIDE [J].

FAWCETT, W ;

HERBERT, DC .

ELECTRONICS LETTERS, 1973, 9 (14) :308-309

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