HIGH-FIELD TRANSPORT IN INDIUM PHOSPHIDE

被引：18

作者：

FAWCETT, W ^{[1
]}

HERBERT, DC ^{[1
]}

机构：

[1] ROY RADAR ESTAB,GREAT MALVERN WR14 3PS,ENGLAND

来源：

ELECTRONICS LETTERS | 1973年 / 9卷 / 14期

关键词：

D O I：

10.1049/el:19730221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：308 / 309

页数：2

共 18 条

[1]

ALFREY GF, 1972, J PHYS C SOLID STATE, V5, P275

[2] MEASUREMENTS ON VELOCITY/FIELD CHARACTERISTIC OF INDIUM PHOSPHIDE [J].

BOERS, PM .

ELECTRONICS LETTERS, 1971, 7 (20) :625-+

[3] MEASUREMENTS ON DIPOLE DOMAINS IN INDIUM PHOSPHIDE [J].

BOERS, PM .

PHYSICS LETTERS A, 1971, A 34 (06) :329-+

[4] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[5] OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES [J].

FAWCETT, W ;

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1969, 5 (14) :313-&

[6]

FAWCETT W, TO BE PUBLISHED

[7] MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE INP [J].

GLOVER, GH .

APPLIED PHYSICS LETTERS, 1972, 20 (06) :224-&

[8] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC OF N-INP [J].

HAMMAR, C ;

VINTER, B .

SOLID STATE COMMUNICATIONS, 1972, 11 (05) :751-&

[9]

HERBERT DB, TO BE PUBLISHED

[10]

HERBERT DC, 1972, P INT C PHYS SEMICON, V2, P1221

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