HIGH-FIELD TRANSPORT IN INDIUM PHOSPHIDE

被引:18
作者
FAWCETT, W [1 ]
HERBERT, DC [1 ]
机构
[1] ROY RADAR ESTAB,GREAT MALVERN WR14 3PS,ENGLAND
关键词
D O I
10.1049/el:19730221
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:308 / 309
页数:2
相关论文
共 18 条
[1]  
ALFREY GF, 1972, J PHYS C SOLID STATE, V5, P275
[2]   MEASUREMENTS ON VELOCITY/FIELD CHARACTERISTIC OF INDIUM PHOSPHIDE [J].
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ELECTRONICS LETTERS, 1971, 7 (20) :625-+
[3]   MEASUREMENTS ON DIPOLE DOMAINS IN INDIUM PHOSPHIDE [J].
BOERS, PM .
PHYSICS LETTERS A, 1971, A 34 (06) :329-+
[4]   MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].
FAWCETT, W ;
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[5]   OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES [J].
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REES, HD .
ELECTRONICS LETTERS, 1969, 5 (14) :313-&
[6]  
FAWCETT W, TO BE PUBLISHED
[7]   MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE INP [J].
GLOVER, GH .
APPLIED PHYSICS LETTERS, 1972, 20 (06) :224-&
[8]   CALCULATION OF VELOCITY-FIELD CHARACTERISTIC OF N-INP [J].
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[9]  
HERBERT DB, TO BE PUBLISHED
[10]  
HERBERT DC, 1972, P INT C PHYS SEMICON, V2, P1221