MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE INP

被引：35

作者：

GLOVER, GH

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 20卷 / 06期

关键词：

D O I：

10.1063/1.1654120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：224 / &

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[1] MEASUREMENTS ON VELOCITY/FIELD CHARACTERISTIC OF INDIUM PHOSPHIDE
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[2] EFFECTS OF DOPING PROFILE ON MEASURED VELOCITY-ELECTRIC FIELD CHARACTERISTIC OF N-TYPE GAAS
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[3] MICROWAVE MEASUREMENT OF VELOCITY-ELECTRIC-FIELD CHARACTERISTIC OF INHOMOGENEOUS EPITAXIAL GAAS WITH CONDUCTING SUBSTRATE
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[4] ERROR IN MICROWAVE MEASUREMENTS OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE GAAS DUE TO ENERGY RELAXATION EFFECTS
GLOVER, GH
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (07) : 290 - +
[5] DISPLACED-MAXWELLIAN TRANSPORT CALCULATION FOR INP AND INAS0.2P0.8
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[6] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE
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[7] BAND STRUCTURE AND HIGH-FIELD TRANSPORT PROPERTIES OF INP
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[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 3998 - +
[8] LAM HT, 1971, ELECTRON LETT, V7, P722
[9] 3-LEVEL TRANSFERRED-ELECTRON EFFECTS IN INP
REES, HD
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[J]. ELECTRONICS LETTERS, 1971, 7 (15) : 437 - &