学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
ERROR IN MICROWAVE MEASUREMENTS OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE GAAS DUE TO ENERGY RELAXATION EFFECTS
被引:10
作者
:
GLOVER, GH
论文数:
0
引用数:
0
h-index:
0
GLOVER, GH
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1971年
/ 18卷
/ 07期
关键词
:
D O I
:
10.1063/1.1653669
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:290 / +
页数:1
相关论文
共 8 条
[1]
MEASUREMENTS OF CURRENT-FIELD STRENGTH CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE USING VARIOUS HIGH-POWER MICROWAVE TECHNIQUES
ACKET, GA
论文数:
0
引用数:
0
h-index:
0
ACKET, GA
DEGROOT, J
论文数:
0
引用数:
0
h-index:
0
DEGROOT, J
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(09)
: 505
-
+
[2]
DETERMINATION OF NEGATIVE DIFFERENTIAL MOBILITY OF N-TYPE GALLIUM ARSENIDE USING 8MM-MICROWAVES
ACKET, GA
论文数:
0
引用数:
0
h-index:
0
ACKET, GA
[J].
PHYSICS LETTERS A,
1967,
A 24
(04)
: 200
-
&
[3]
MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GAAS
BRASLAU, N
论文数:
0
引用数:
0
h-index:
0
BRASLAU, N
HAUGE, PS
论文数:
0
引用数:
0
h-index:
0
HAUGE, PS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1970,
ED17
(08)
: 616
-
+
[4]
VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE FROM MEASUREMENT OF CONDUCTIVITY IN A MICROWAVE FIELD
BRASLAU, N
论文数:
0
引用数:
0
h-index:
0
BRASLAU, N
[J].
PHYSICS LETTERS A,
1967,
A 24
(10)
: 531
-
&
[5]
A MICROWAVE EVALUATION OF VELOCITY-FIELD CHARACTERISTIC IN DIFFERENT REGIONS OF INDIVIDUAL EPITAXIAL GALLIUM - ARSENIDE LAYERS
COHEN, LD
论文数:
0
引用数:
0
h-index:
0
机构:
Bayside Research Ctr., General Telephone and Electronics Labs., Inc., Bayside N.Y.
COHEN, LD
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(07)
: 1299
-
+
[6]
HAMAGUCHI G, 1967, PHYS LETTERS A, V24, P500
[7]
KALASHNIKOV SG, 1968, SOV PHYS SEMICOND+, V1, P1206
[8]
THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
MCCUMBER, DE
论文数:
0
引用数:
0
h-index:
0
MCCUMBER, DE
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
: 4
-
+
←
1
→
共 8 条
[1]
MEASUREMENTS OF CURRENT-FIELD STRENGTH CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE USING VARIOUS HIGH-POWER MICROWAVE TECHNIQUES
ACKET, GA
论文数:
0
引用数:
0
h-index:
0
ACKET, GA
DEGROOT, J
论文数:
0
引用数:
0
h-index:
0
DEGROOT, J
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(09)
: 505
-
+
[2]
DETERMINATION OF NEGATIVE DIFFERENTIAL MOBILITY OF N-TYPE GALLIUM ARSENIDE USING 8MM-MICROWAVES
ACKET, GA
论文数:
0
引用数:
0
h-index:
0
ACKET, GA
[J].
PHYSICS LETTERS A,
1967,
A 24
(04)
: 200
-
&
[3]
MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GAAS
BRASLAU, N
论文数:
0
引用数:
0
h-index:
0
BRASLAU, N
HAUGE, PS
论文数:
0
引用数:
0
h-index:
0
HAUGE, PS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1970,
ED17
(08)
: 616
-
+
[4]
VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE FROM MEASUREMENT OF CONDUCTIVITY IN A MICROWAVE FIELD
BRASLAU, N
论文数:
0
引用数:
0
h-index:
0
BRASLAU, N
[J].
PHYSICS LETTERS A,
1967,
A 24
(10)
: 531
-
&
[5]
A MICROWAVE EVALUATION OF VELOCITY-FIELD CHARACTERISTIC IN DIFFERENT REGIONS OF INDIVIDUAL EPITAXIAL GALLIUM - ARSENIDE LAYERS
COHEN, LD
论文数:
0
引用数:
0
h-index:
0
机构:
Bayside Research Ctr., General Telephone and Electronics Labs., Inc., Bayside N.Y.
COHEN, LD
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(07)
: 1299
-
+
[6]
HAMAGUCHI G, 1967, PHYS LETTERS A, V24, P500
[7]
KALASHNIKOV SG, 1968, SOV PHYS SEMICOND+, V1, P1206
[8]
THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS
MCCUMBER, DE
论文数:
0
引用数:
0
h-index:
0
MCCUMBER, DE
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(01)
: 4
-
+
←
1
→