A MICROWAVE EVALUATION OF VELOCITY-FIELD CHARACTERISTIC IN DIFFERENT REGIONS OF INDIVIDUAL EPITAXIAL GALLIUM - ARSENIDE LAYERS

被引：7

作者：

COHEN, LD

机构：

[1] Bayside Research Ctr., General Telephone and Electronics Labs., Inc., Bayside N.Y.

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 07期

关键词：

D O I：

10.1109/PROC.1969.7239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The velocity (current)-electric field characteristic has been measured in different regions of individual epitaxial gallium-arsenide wafers by a high-power microwave technique. Epitaxial-n layers on semi-insulating substrates ranging in resistivity from approximately 0.5 to 5 n cm have been characterized. Trends in high-field microwave properties with normally specified low-field dc material properties are indicated. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1299 / +

页数：1

共 7 条

[1] MEASUREMENTS OF CURRENT-FIELD STRENGTH CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE USING VARIOUS HIGH-POWER MICROWAVE TECHNIQUES [J].