LOW-NOISE MICROWAVE AMPLIFICATION USING TRANSFERRED-ELECTRON AND BARITT DEVICES

被引：9

作者：

ROBSON, PN ^{[1
]}

机构：

[1] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, MAPPIN ST, SHEFFIELD S1 3JD, ENGLAND

来源：

RADIO AND ELECTRONIC ENGINEER | 1974年 / 44卷 / 10期

关键词：

D O I：

10.1049/ree.1974.0133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：553 / 567

页数：15

共 24 条

[11] DIFFUSION OF HOT-ELECTRONS IN N INDIUM PHOSPHIDE [J].

HAMMAR, C ;

VINTER, B .

ELECTRONICS LETTERS, 1973, 9 (01) :9-10

[12]

Haus H.A., 1959, Circuit Theory of Linear Noisy Networks

[13]

Maloberti F., 1971, Alta Frequenza, V40, P667

[14] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].

MCCUMBER, DE ;

CHYNOWETH, AG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :4-+

[15] WIDE-BAND REFLECTION-TYPE TRANSFERRED ELECTRON AMPLIFIERS [J].

PERLMAN, BS ;

UPADHYAYULA, CL ;

MARX, RE .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) :911-+

[16]

RABIER A, 1973, P EUROPEAN MICROWAVE, V1

[17]

Shockley W., 1966, QUANTUM THEORY ATOMS, P537

[18] DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON [J].

SIGMON, TW ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :320-&

[19]

SITCH J, TO BE PUBLISHED

[20] COMPUTER MODELING OF LOW-NOISE INDIUM-PHOSPHIDE AMPLIFIERS [J].

SITCH, JE .

ELECTRONICS LETTERS, 1974, 10 (06) :74-75

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