HIGH-FIELD DIFFUSIVITY OF ELECTRONS IN SILICON

[1] BAREIKIS V, 1968, P INT PHYSICS SEMICO, P760

[2] DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 191 - &

[3] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +

[4] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[5] Conwell E M, 1967, HIGH FIELD TRANSPORT

[6] NON-OHMIC BEHAVIOUR IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) : 413 - &

[7] ERLBACH E, 1962, P INT C PHYS SEMICON, P128

[8] FAWCETT W, 1970, 10 P INT C PHYS SEM, P51

[9] DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 141 - &

[10] MEASUREMENT OF HIGH-FIELD CARRIER DRIFT VELOCITIES IN SILICON BY A TIME-OF-FLIGHT TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 38 - +

[1] BAREIKIS V, 1968, P INT PHYSICS SEMICO, P760

[2] DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD [J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 191 - &

[3] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +

[4] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[5] Conwell E M, 1967, HIGH FIELD TRANSPORT

[6] NON-OHMIC BEHAVIOUR IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) : 413 - &

[7] ERLBACH E, 1962, P INT C PHYS SEMICON, P128

[8] FAWCETT W, 1970, 10 P INT C PHYS SEM, P51

[9] DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 141 - &

[10] MEASUREMENT OF HIGH-FIELD CARRIER DRIFT VELOCITIES IN SILICON BY A TIME-OF-FLIGHT TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 38 - +