HIGH-FIELD DIFFUSIVITY OF ELECTRONS IN SILICON

[11] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 175 - 180

[12] QUARANTA AA, 1965, PHYS LETT, V17, P102

[13] TRANSPORT PROPERTIES OF GAAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 921 - +

[14] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[15] DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 320 - &

[16] Smith R. A., 1959, SEMICONDUCTORS

[11] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 175 - 180

[12] QUARANTA AA, 1965, PHYS LETT, V17, P102

[13] TRANSPORT PROPERTIES OF GAAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 921 - +

[14] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[15] DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 320 - &

[16] Smith R. A., 1959, SEMICONDUCTORS