MOLECULAR-BEAM EPITAXIAL-GROWTH AND MICROSTRUCTURAL CHARACTERIZATION OF GAAS ON SI WITH A BURIED IMPLANTED OXIDE

被引：2

作者：

DAS, K

HUMPHREYS, TP

POSTHILL, JB

TARN, JCL

WORTMAN, JJ

PARIKH, NR

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[2] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27599

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3934 / 3937

页数：4

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[9] MICROSTRUCTURE OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR [J].

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[10] HIGH-TEMPERATURE ANNEALING OF IMPLANTED BURIED OXIDE IN SILICON [J].

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