HIGH-TEMPERATURE ANNEALING OF IMPLANTED BURIED OXIDE IN SILICON

被引：18

作者：

MOGROCAMPERO, A

LOVE, RP

LEWIS, N

HALL, EL

MCCONNELL, MD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.337215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2103 / 2105

页数：3

共 8 条

[1]

BURNHAM ME, 1985, P SOC PHOTO-OPT INST, V530, P240, DOI 10.1117/12.946492

[2] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].

CELLER, GK ;

HEMMENT, PLF ;

WEST, KW ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534

[3] SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS [J].

HEMMENT, PLF ;

PEART, RF ;

YAO, MF ;

STEPHENS, KG ;

ARROWSMITH, RP ;

CHATER, RJ ;

KILNER, JA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :292-297

[4] MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS [J].

JAUSSAUD, C ;

STOEMENOS, J ;

MARGAIL, J ;

DUPUY, M ;

BLANCHARD, B ;

BRUEL, M .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1064-1066

[5] MICROSTRUCTURE OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR [J].

MAO, BY ;

CHANG, PH ;

LAM, HW ;

SHEN, BW ;

KEENAN, JA .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :794-796

[6] TARGET HEATING DURING ION-IMPLANTATION [J].

PARRY, PD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02) :622-629

[7]

PINIZZOTTO RF, 1984, MATER RES SOC S P, V27, P265

[8] SYNTHESIS OF SILICON DIOXIDE BY ION-IMPLANTATION [J].

WILSON, IH .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) :331-343

← 1 →