CHARACTERIZATION OF SILICON TRANSDUCERS WITH SI3N4 SENSING SURFACES BY AN AFM AND A PAB SYSTEM

被引：5

作者：

ADAMI, M ^{[1
]}

ALLIATA, D ^{[1
]}

DELCARLO, C ^{[1
]}

MARTINI, M ^{[1
]}

PIRAS, L ^{[1
]}

SARTORE, M ^{[1
]}

NICOLINI, C ^{[1
]}

机构：

[1] UNIV GENOA,INST BIOPHYS,I-16153 GENOA,ITALY

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 25卷 / 1-3期

关键词：

ATOMIC FORCE MICROSCOPE; POTENTIOMETRIC ALTERNATING BIOSENSORS; SILICON TRANSDUCERS;

D O I：

10.1016/0925-4005(95)85196-8

中图分类号：

O65 [分析化学];

学科分类号：

070302 [分析化学]; 081704 [应用化学];

摘要：

Silicon nitride is normally used as a sensitive surface for silicon-based transducers like ISFETs or light-addressable potentiometric sensors (LAPS), because of its capability to sense preferentially H+ ions. We have investigated Si/SiO2/Si3N4 heterostructures and studied the surface layers via an atomic force microscope (AFM) and a PAB (potentiometric alternating biosensor) system; in particular, the latter method allows the investigation of the temporal behaviour after input pH steps. A suitable experimental set-up has been installed in order to optimize the pH changes in the measuring chamber; data have been acquired corresponding to unit pH steps. The resulting time constants are calculated and the data related to the surface layer images acquired by the AFM. A correlation between different observed responses and the corresponding surface characteristics has been established.

引用

页码：889 / 893

页数：5

共 11 条

[1]

MONITORING OF ENZYMATIC-ACTIVITY AND QUANTITATIVE MEASUREMENTS OF SUBSTRATES BY MEANS OF A NEWLY DESIGNED SILICON-BASED POTENTIOMETRIC SENSOR [J].