THE 1ST STAGES OF THE AU/GE(111) INTERFACE FORMATION

[1] DESORPTION-KINETICS OF CONDENSED PHASES - 2-DIMENSIONAL PHASES OF SILVER ON GE(111) [J]. SURFACE SCIENCE, 1979, 85 (02) : 471 - 492

[2] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4552 - 4559

[3] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841

[4] CROS A, 1982, SURF SCI, V116, pL232, DOI 10.1016/0039-6028(82)90354-5

[5] ELECTRONIC AND CRYSTALLOGRAPHIC STRUCTURES OF SILVER ADSORBED ON SILICON (111) [J]. JOURNAL DE PHYSIQUE LETTRES, 1978, 39 (16): : L287 - L290

[6] Fukushima J., 1974, J PHYS-PARIS, V35, pC4

[7] ANOMALOUS 1/3 422 DIFFRACTION SPOTS FROM (111) FLAT GOLD CRYSTALLITES - (111) SURFACE RECONSTRUCTION AND MOIRE FRINGES BETWEEN THE SURFACE AND THE BULK [J]. SURFACE SCIENCE, 1980, 100 (03) : 519 - 528

[8] Kern R., 1979, Current topics in materials science, vol.3, P131

[9] KERN R, 1977, J PHYSIQUE, V38, P155

[10] INFLUENCE OF ATOMIC STEPS ON PHOTOELECTRIC PROPERTIES OF CLEAN CLEAVED SILICON AS DERIVED FROM SURFACE PHOTOVOLTAGE [J]. SURFACE SCIENCE, 1977, 69 (02) : 533 - 546

[1] DESORPTION-KINETICS OF CONDENSED PHASES - 2-DIMENSIONAL PHASES OF SILVER ON GE(111) [J]. SURFACE SCIENCE, 1979, 85 (02) : 471 - 492

[2] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4552 - 4559

[3] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841

[4] CROS A, 1982, SURF SCI, V116, pL232, DOI 10.1016/0039-6028(82)90354-5

[5] ELECTRONIC AND CRYSTALLOGRAPHIC STRUCTURES OF SILVER ADSORBED ON SILICON (111) [J]. JOURNAL DE PHYSIQUE LETTRES, 1978, 39 (16): : L287 - L290

[6] Fukushima J., 1974, J PHYS-PARIS, V35, pC4

[7] ANOMALOUS 1/3 422 DIFFRACTION SPOTS FROM (111) FLAT GOLD CRYSTALLITES - (111) SURFACE RECONSTRUCTION AND MOIRE FRINGES BETWEEN THE SURFACE AND THE BULK [J]. SURFACE SCIENCE, 1980, 100 (03) : 519 - 528

[8] Kern R., 1979, Current topics in materials science, vol.3, P131

[9] KERN R, 1977, J PHYSIQUE, V38, P155

[10] INFLUENCE OF ATOMIC STEPS ON PHOTOELECTRIC PROPERTIES OF CLEAN CLEAVED SILICON AS DERIVED FROM SURFACE PHOTOVOLTAGE [J]. SURFACE SCIENCE, 1977, 69 (02) : 533 - 546