THEORY OF THE DX CENTERS IN III-V SEMICONDUCTORS AND (001) SUPERLATTICES

被引：46

作者：

YAMAGUCHI, E

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1987年 / 56卷 / 08期

关键词：

D O I：

10.1143/JPSJ.56.2835

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2835 / 2852

页数：18

共 48 条

[1] [Anonymous], ELECTRONIC STRUCTURE
[2] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE
BABA, T
MIZUTANI, T
OGAWA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629
[3] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
BERNHOLC, J
PANTELIDES, ST
[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789
[4] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS
CHAND, N
HENDERSON, T
KLEM, J
MASSELINK, WT
FISCHER, R
CHANG, YC
MORKOC, H
[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492
[5] ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP
CHEN, AB
SHER, A
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5360 - 5374
[6] ELASTIC-CONSTANTS OF GAAS FROM 2 K TO 320 K
COTTAM, RI
SAUNDERS, GA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (13): : 2105 - 2118
[7] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION
CRAFORD, MG
STILLMAN, GE
ROSSI, JA
HOLONYAK, N
[J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &
[8] HAMADA N, 1986 INT C SOL STAT, P343
[9] A COMMON ENERGY REFERENCE FOR DX CENTERS AND EL2 LEVELS IN III-V COMPOUND SEMICONDUCTORS
HASEGAWA, H
OHNO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04): : L319 - L322
[10] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT
HJALMARSON, HP
DRUMMOND, TJ
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 656 - 658

← 1 2 3 4 5 →