CONTACT ANGLES IN THE LIQUID-PHASE EPITAXY OF INP, GAINAS AND GAINASP

[1] N+-INP GROWTH ON INGAAS BY LIQUID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1003 - 1004

[2] HSIEH JJ, 1981, IEEE J QUANTUM ELECT, V17, P118, DOI 10.1109/JQE.1981.1071083

[3] MEASUREMENT OF THE SURFACE-TENSION OF GALLIUM AND INDIUM IN A HYDROGEN ATMOSPHERE BY THE SESSILE DROP METHOD [J]. JOURNAL OF THE LESS-COMMON METALS, 1983, 90 (02): : 299 - 303

[4] CONTACT ANGLES BETWEEN III-V MELTS AND SEVERAL SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 685 - 686

[5] POLARITY DEPENDENCE OF CONTACT ANGLES BETWEEN LIQUID GALLIUM AND [111] SURFACES OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 368 - &

[6] Mykura H., 1966, SOLID SURFACES INTER

[7] CONTACT ANGLES BETWEEN (GAAL)AS SOLID AND SOLUTIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (02) : 317 - 319

[8] SCHLOSSER E, UNPUB

[1] N+-INP GROWTH ON INGAAS BY LIQUID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1003 - 1004

[2] HSIEH JJ, 1981, IEEE J QUANTUM ELECT, V17, P118, DOI 10.1109/JQE.1981.1071083

[3] MEASUREMENT OF THE SURFACE-TENSION OF GALLIUM AND INDIUM IN A HYDROGEN ATMOSPHERE BY THE SESSILE DROP METHOD [J]. JOURNAL OF THE LESS-COMMON METALS, 1983, 90 (02): : 299 - 303

[4] CONTACT ANGLES BETWEEN III-V MELTS AND SEVERAL SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 685 - 686

[5] POLARITY DEPENDENCE OF CONTACT ANGLES BETWEEN LIQUID GALLIUM AND [111] SURFACES OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 368 - &

[6] Mykura H., 1966, SOLID SURFACES INTER

[7] CONTACT ANGLES BETWEEN (GAAL)AS SOLID AND SOLUTIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (02) : 317 - 319

[8] SCHLOSSER E, UNPUB