HOT-ELECTRON INJECTION IN MILLIMETER WAVE GUNN-DIODES

被引：10

作者：

COUCH, NR

KELLY, MJ

SPOONER, H

KERR, TM

机构：

[1] GEC LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

[2] MARCONI ELECTR DEVICES LTD,LINCOLN,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90295-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1685 / 1688

页数：4

共 6 条

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KELLY, MJ .

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[2] THE USE OF LINEARLY GRADED COMPOSITION ALGAAS INJECTORS FOR INTERVALLEY TRANSFER IN GAAS - THEORY AND EXPERIMENT [J].

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BETON, PH ;

KELLY, MJ ;

KERR, TM ;

KNIGHT, DJ ;

ONDRIA, J .

SOLID-STATE ELECTRONICS, 1988, 31 (3-4) :613-616

[3] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

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[4] THE EFFECT OF A HIGH-ENERGY INJECTION ON THE PERFORMANCE OF MM WAVE GUNN OSCILLATORS [J].

GREENWALD, Z ;

WOODARD, DW ;

CALAWA, AR ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1988, 31 (07) :1211-1214

[5]

SPOONER H, 1989, IN PRESS GEC J RES, V7

[6]

SZE SM, 1981, PHYSICS SEMICONDUCTO, P647

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