USE OF N+ SPIKE DOPING REGIONS AS NONEQUILIBRIUM CONNECTORS

被引：8

作者：

BETON, PH

LONG, AP

COUCH, NR

KELLY, MJ

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 07期

关键词：

D O I：

10.1049/el:19880294

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：434 / 435

页数：2

共 10 条

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[7] VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING [J].

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[8] Hot-electron transport in heavily doped GaAs [J].

Long, AP ;

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Kelly, MJ .

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[9] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].

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[10]

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