STRUCTURE OF HYDROGEN-INDUCED PLANAR DEFECT IN SILICON BY HIGH-RESOLUTION ELECTRON-MICROSCOPY

被引：13

作者：

MUTO, S ^{[1
]}

TAKEDA, S ^{[1
]}

HIRATA, M ^{[1
]}

TANABE, T ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,SUITA,OSAKA 565,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期

关键词：

D O I：

10.1063/1.349243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has been known that introduction of hydrogen into silicon at moderate temperatures results in extended planar defects on {111} planes. The structure of the hydrogen-induced defects in silicon has been investigated by means of high-resolution transmission electron microscopy. As a result of the contrast analysis of the high-resolution images, with the aid of computer simulation, we propose a new structural model, which involves breaking of Si-Si bonds between layers of smaller spacing, connected with three bonds per atom, rather than those of larger spacing with one bond per atom. The broken bonds are considered to be saturated by hydrogen atoms.

引用

页码：3505 / 3508

页数：4

共 17 条

[1]

ANSTIS GR, 1981, I PHYS C SERIES, V60, P15

[2]

CERVA H, 1990, DEFECT CONTROL SEMIC, P507

[3]

CHU WK, 1977, ION IMPLANTATION SEM, P483

[4] THE SCATTERING OF ELECTRONS BY ATOMS AND CRYSTALS .1. A NEW THEORETICAL APPROACH [J].