ELECTROREFLECTANCE AND WAVELENGTH MODULATION STUDY OF DIRECT AND INDIRECT FUNDAMENTAL TRANSITION REGION OF IN-1-XGAXP-1

被引：23

作者：

LANGE, H ^{[1
]}

DONECKER, J ^{[1
]}

FRIEDRICH, H ^{[1
]}

机构：

[1] DAWB,ZENT INST ELEKTR PHYS,BERLIN,DEUTSCH DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1976年 / 73卷 / 02期

关键词：

D O I：

10.1002/pssb.2220730231

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：633 / 639

页数：7

共 26 条

[21]

RODOT H, 1969, CR ACAD SCI B PHYS, V269, P381

[22] OPTICALLY PUMPED IN1-X GAXP PLATELET LASERS FROM INFRARED TO YELLOW (8900-5800 A, 77 DEGREES K) [J].

SCIFRES, DR ;

HOLONYAK, N ;

DUPUIS, RD ;

MACKSEY, HM .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1019-&

[23] SPIN-ORBIT SPLITTING IN COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].

VANVECHTEN, JA ;

WOOLLEY, JC ;

BEROLO, O .

PHYSICAL REVIEW LETTERS, 1972, 29 (20) :1400-+

[24] ELECTRONIC STRUCTURES OF SEMICONDUCTOR ALLOYS [J].

VANVECHTEN, JA ;

BERGSTRESSER, TK .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (08) :3351-+

[25] APPLICATIONS OF PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY TO STUDY OF INDIUM GALLIUM PHOSPHIDE ALLOYS [J].

WHITE, AM ;

WILLIAMS, EW ;

PORTEOUS, P ;

HILSUM, C .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (09) :1322-&

[26] (IN,GA)P ALLOYS - PHOTOLUMINESCENCE EXCITATION AND CATHODOLUMINESCENCE OF ZINC DOPED INDIRECT GAP ALLOYS [J].

WILLIAMS, EW ;

WHITE, AM ;

ASHFORD, A ;

HILSUM, C ;

PORTEOUS, P ;

WIGHT, DR .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02) :L55-&

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