ENERGY-LEVEL ASSOCIATED WITH THE DX CENTER IN GA1-XALXAS

被引:29
作者
ZAZOUI, M
FENG, SL
BOURGOIN, JC
机构
[1] Groupe de Physique des Solides de LEcole Normale Supérieure, Université de Paris VII, 75251 Paris CEDEX 05
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 12期
关键词
D O I
10.1103/PhysRevB.41.8485
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We examine in detail the variation of the DX-associated energy-level position versus alloy composition. It is found to be located at a constant energy from the L band whatever the nature of the impurity and the lattice site it occupies. Using the enhancement of the electron emission rate from the DX center with electric field, which happens to be characteristic of a Poole-Frenkel effect, we deduce that this energy level corresponds to a single donor state. The existence in the gap of two single donor levels, one shallow and one deep associated with the DX center, implies that these levels must arise from two effective-mass states associated with two different conduction bands: the shallow one with the lowest conduction band, and the deep one with the L band. We develop the statistics of occupation corresponding to this unusual situation. The identification of the DX level with the L effective-mass state deepened by intervalley mixing is in agreement with the Coulombic nature of its potential. © 1990 The American Physical Society.
引用
收藏
页码:8485 / 8492
页数:8
相关论文
共 51 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]   LUMINESCENCE OF THE DX CENTER IN ALGAAS [J].
ALAYA, S ;
MAAREF, H ;
BOURGOIN, JC .
APPLIED PHYSICS LETTERS, 1989, 55 (14) :1406-1408
[3]  
Azema S., 1989, Materials Science Forum, V38-41, P857, DOI 10.4028/www.scientific.net/MSF.38-41.857
[4]   DONOR-LEVELS ANALYSIS IN GAAIAS DOUBLE HETEROSTRUCTURE [J].
BALLAND, B ;
VINCENT, G ;
BOIS, D ;
HIRTZ, P .
APPLIED PHYSICS LETTERS, 1979, 34 (01) :108-110
[5]  
BHIBASHI T, 1986, JPN J APPL PHYS, V21, pL476
[6]  
BHIKAWA T, 1988, APPL PHYS LETT, V53, P1926
[7]   MULTIPHONON CAPTURE IN THE CASE OF UNDISTORTED DEFECTS [J].
BOURGOIN, JC .
PHYSICAL REVIEW B, 1988, 38 (18) :13472-13473
[8]   SUPPRESSION OF DX CENTERS IN GAALAS-GAAS HETEROSTRUCTURES [J].
BOURGOIN, JC ;
FENG, SL ;
STIEVENARD, D ;
LETARTRE, X ;
BARBIER, E ;
HIRTZ, JP .
APPLIED PHYSICS LETTERS, 1989, 54 (12) :1115-1117
[9]   DX CENTER IN GA1-XALXAS ALLOYS [J].
BOURGOIN, JC ;
FENG, SL ;
VONBARDELEBEN, HJ .
PHYSICAL REVIEW B, 1989, 40 (11) :7663-7670
[10]  
BOURGOIN JC, 1988, APPL PHYS LETT, V53, P741