NITROGEN RELATED DEFECT CENTERS IN ZINC SELENIDE

被引：12

作者：

LEIGH, WB

WESSELS, BW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 06期

关键词：

D O I：

10.1063/1.333423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1614 / 1616

页数：3

共 8 条

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BESOMI, P ;

WESSELS, BW .

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[2] DETECTION OF TRAPS IN HIGH CONDUCTIVITY ZNSE BY OPTICAL TRANSIENT CAPACITANCE SPECTROSCOPY [J].

CHRISTIANSON, KA ;

WESSELS, BW .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4205-4208

[3] IONIZATION-ENERGY OF THE SHALLOW NITROGEN ACCEPTOR IN ZINC SELENIDE [J].

DEAN, PJ ;

STUTIUS, W ;

NEUMARK, GF ;

FITZPATRICK, BJ ;

BHARGAVA, RN .

PHYSICAL REVIEW B, 1983, 27 (04) :2419-2428

[4] SPECTROSCOPIC STUDIES OF ZNSE GROWN BY LIQUID-PHASE EPITAXY [J].

FITZPATRICK, BJ ;

WERKHOVEN, CJ ;

MCGEE, TF ;

HARNACK, PM ;

HERKO, SP ;

BHARGAVA, RN ;

DEAN, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) :440-444

[5] EXCITONS AND ABSORPTION EDGE IN ZNSE [J].

HITE, GE ;

MARPLE, DTF ;

AVEN, M ;

SEGALL, B .

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[6]

MANDEL G, 1964, PHYS REV A, V136, P826

[7]

MITONNEAU A, 1977, I PHYS C SER A, V33, P73

[8] NITROGEN AS SHALLOW ACCEPTOR IN ZNSE GROWN BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].

STUTIUS, W .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :246-248

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