DETECTION OF TRAPS IN HIGH CONDUCTIVITY ZNSE BY OPTICAL TRANSIENT CAPACITANCE SPECTROSCOPY

被引:19
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CHRISTIANSON, KA
WESSELS, BW
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10.1063/1.332516
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O59 [应用物理学];
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页码:4205 / 4208
页数:4
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  • [1] DEEP LEVEL DEFECTS IN HETERO-EPITAXIAL ZINC SELENIDE
    BESOMI, P
    WESSELS, BW
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3076 - 3084
  • [2] GROWTH AND CHARACTERIZATION OF HETERO-EPITAXIAL ZINC SELENIDE
    BESOMI, P
    WESSELS, BW
    [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) : 477 - 484
  • [3] INVESTIGATIONS OF MN-DOPED ZNSE BY PHOTOCAPACITANCE AND PHOTOCURRENT TECHNIQUES
    GRIMMEISS, HG
    OVREN, C
    ALLEN, JW
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1103 - 1111
  • [4] LEE KM, 1981, I PHYS C SER, V59, P353
  • [5] PAIR SPECTRA AND SHALLOW ACCEPTORS IN ZNSE
    MERZ, JL
    NASSAU, K
    SHIEVER, JW
    [J]. PHYSICAL REVIEW B, 1973, 8 (04): : 1444 - 1452
  • [6] MITONNEAU A, 1977, I PHYS C SER A, V33, P73
  • [7] PHOTOELECTRONIC PROPERTIES OF ZNSE CRYSTALS
    STRINGFELLOW, GB
    BUBE, RH
    [J]. PHYSICAL REVIEW, 1968, 171 (03): : 903 - +
  • [8] P-TYPE CONDUCTION IN UNDOPED ZNSE
    YU, PW
    PARK, YS
    [J]. APPLIED PHYSICS LETTERS, 1973, 22 (07) : 345 - 346