VISIBLE PHOTOLUMINESCENCE IN CRYSTALLIZED AMORPHOUS SIH/SINXH MULTIQUANTUM-WELL STRUCTURES

被引：131

作者：

CHEN, KJ ^{[1
]}

HUANG, XF ^{[1
]}

JUN, X ^{[1
]}

DUAN, F ^{[1
]}

机构：

[1] NANJING UNIV,SOLID STATE MICROSTRUCT LAB,NANJING,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 17期

关键词：

D O I：

10.1063/1.108309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Visible photoluminescence has been observed in crystallized a-Si:H/a-SiNx:H multiquantum-well structures at room temperature. The MQW heterostructures consisting of 72 layers were formed by computer controlled plasma-enhanced chemical-vapor deposition method and then crystallized by Ar+ laser annealing technique. The crystallinity and average grain size of the silicon microcrystals were determined by means of Raman and x-ray diffraction spectroscopy. The crystallized samples with well-layer thickness L(s)=40 angstrom showed an intense photoluminescence which is peaked at 2.1 eV with a full width at half-maximum of 0.25 eV. This is consistent with calculations based on the quantum confinement model.

引用

页码：2069 / 2071

页数：3

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