TEMPERATURE-DEPENDENCE OF ELECTRONIC STATES IN (TASE4)(2)I

被引：27

作者：

TERRASI, A

MARSI, M

BERGER, H

MARGARITONDO, G

KELLEY, RJ

ONELLION, M

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST GENIE ATOM,CH-1015 LAUSANNE,SWITZERLAND

[2] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.52.5592

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Angle-resolved photoemissions studies were conducted on single-crystal (TaSe4)(2)I samples above and below the charge-density-wave transition temperature (T-CDW) of 260 K. We observed a shift of the leading photoemission edge between 300 and 60 K consistent with resistivity measurements performed on the same sample: a band gap opens throughout the Brillouin zone below T-CDW. However, several aspects of the data are difficult to reconcile with any standard model.

引用

页码：5592 / 5597

页数：6

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