SI LIQUID-AMORPHOUS TRANSITION AND IMPURITY SEGREGATION

被引：24

作者：

CAMPISANO, SU ^{[1
]}

JACOBSON, DC ^{[1
]}

POATE, JM ^{[1
]}

CULLIS, AG ^{[1
]}

CHEW, NG ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

关键词：

D O I：

10.1063/1.95882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：846 / 848

页数：3

共 11 条

[1] [Anonymous], 1982, LASER ANNEALING SEMI
[2] Baeri P., 1982, LASER ANNEALING SEMI
[3] CAMPISANO SU, 1984, ENERGY BEAM SOLID IN, P89
[4] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING
CULLIS, AG
WEBBER, HC
CHEW, NG
POATE, JM
BAERI, P
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (03) : 219 - 222
[5] ULTRARAPID CRYSTAL-GROWTH AND IMPURITY SEGREGATION IN AMORPHOUS-SILICON ANNEALED WITH SHORT Q-SWITCHED LASER-PULSES
CULLIS, AG
WEBBER, HC
CHEW, NG
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 998 - 1000
[6] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON
DONOVAN, EP
SPAEPEN, F
TURNBULL, D
POATE, JM
JACOBSON, DC
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700
[7] Poate J. M., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P121
[8] SILICON MELT, REGROWTH, AND AMORPHIZATION VELOCITIES DURING PULSED LASER IRRADIATION
THOMPSON, MO
MAYER, JW
CULLIS, AG
WEBBER, HC
CHEW, NG
POATE, JM
JACOBSON, DC
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (12) : 896 - 899
[9] MELTING TEMPERATURE AND EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON DURING PULSED LASER IRRADIATION
THOMPSON, MO
GALVIN, GJ
MAYER, JW
PEERCY, PS
POATE, JM
JACOBSON, DC
CULLIS, AG
CHEW, NG
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (26) : 2360 - 2363
[10] COMPUTER-SIMULATION OF HIGH-SPEED MELTING OF AMORPHOUS-SILICON
WEBBER, HC
CULLIS, AG
CHEW, NG
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 669 - 671