COMPUTER-SIMULATION OF HIGH-SPEED MELTING OF AMORPHOUS-SILICON

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[2] Baeri P., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P39

[3] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2036 - 2039

[4] Bagley B.G., 1979, AIP CONF P, V50, P97, DOI [10.1063/1.31740, DOI 10.1063/1.31740]

[5] SUBSTRATE AND DOPING EFFECTS UPON LASER-INDUCED EPITAXY OF AMORPHOUS SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 881 - 885

[6] THEORETICAL AND EXPERIMENTAL INVESTIGATION OF THE DYNAMICS OF PULSED LASER ANNEALING OF AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3611 - 3617

[7] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[8] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 547 - 550

[9] CULLIS AG, UNPUB J CRYST GROWTH

[10] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[2] Baeri P., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P39

[3] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2036 - 2039

[4] Bagley B.G., 1979, AIP CONF P, V50, P97, DOI [10.1063/1.31740, DOI 10.1063/1.31740]

[5] SUBSTRATE AND DOPING EFFECTS UPON LASER-INDUCED EPITAXY OF AMORPHOUS SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 881 - 885

[6] THEORETICAL AND EXPERIMENTAL INVESTIGATION OF THE DYNAMICS OF PULSED LASER ANNEALING OF AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3611 - 3617

[7] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[8] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 547 - 550

[9] CULLIS AG, UNPUB J CRYST GROWTH

[10] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700