ION-IMPLANTATION IN GALLIUM-ARSENIDE MESFET TECHNOLOGY

被引：18

作者：

DESOUZA, JP ^{[1
]}

SADANA, DK ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 01期

关键词：

D O I：

10.1109/16.108226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This review emphasizes controlled shallow doping of GaAs by ion implantation and its limitations to state-of-the-art GaAs IC technology. It discusses the electrical activation behavior of implanted silicon in GaAs upon subsequent capless or silicon nitride capped rapid thermal annealing (RTA). It is demonstrated that atomic H diffuses into the implanted region of GaAs from a PECVD Si3N4 cap during the deposition as well as during subsequent annealing, and the H retards the electrical activation kinetics of the implanted Si. Thru-Si cap dopant implants into GaAs have been studied to enhance dopant concentration in the surface region of the GaAs bv recoil-implanted Si from the cap. Application of ion implantation to achieve buried-p layers in GaAs is also briefly discussed.

引用

页码：166 / 175

页数：10

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