CONTACTS ON CHEMICALLY ETCHED CDTE GAMMA-RAY DETECTORS

被引：7

作者：

MUSA, A

PONPON, JP

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 216卷 / 1-2期

关键词：

D O I：

10.1016/0167-5087(83)90358-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：259 / 263

页数：5

共 15 条

[1] TIME-DEPENDENT POLARIZATION OF CDTE GAMMA-RAY DETECTORS [J].

BELL, RO ;

ENTINE, G ;

SERREZE, HB .

NUCLEAR INSTRUMENTS & METHODS, 1974, 117 (01) :267-271

[2] FORMATION AND STABILITY OF IN CONTACTS TO N-TYPE CDTE [J].

BRAITHWAITE, RE ;

MULLIN, JB .

SOLID-STATE ELECTRONICS, 1980, 23 (10) :1091-1092

[3] SPUTTERED INDIUM-TIN OXIDE-CADMIUM TELLURIDE JUNCTIONS AND CADMIUM TELLURIDE SURFACES [J].

COURREGES, FG ;

FAHRENBRUCH, AL ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2175-2183

[4] THIN FILM CDS-CDTE HETEROJUNCTION DIODES [J].

DUTTON, RW ;

MULLER, RS .

SOLID-STATE ELECTRONICS, 1968, 11 (08) :749-&

[5]

Fahrenbruch A. L., 1975, 11th IEEE Photovoltaic Specialists Conference, P490

[6] II-VI-PHOTOVOLTAIC HETEROJUNCTIONS FOR SOLAR-ENERGY CONVERSION [J].

FAHRENBRUCH, AL ;

VASILCHENKO, V ;

BUCH, F ;

MITCHELL, K ;

BUBE, RH .

APPLIED PHYSICS LETTERS, 1974, 25 (10) :605-608

[7]

HOFSTADTER R, 1949, NUCLEONICS, V2, P29

[8]

KASHERININOV PG, 1981, SOV PHYS SEMICOND+, V15, P1099

[9]

MUSA A, 1982, MRS C BOSTON

[10] PN JUNCTION FORMATION IN CDTE BY ION-IMPLANTATION AND PULSED RUBY-LASER ANNEALING [J].

NORRIS, CB ;

WESTMARK, CI ;

ENTINE, G ;

LIS, SA ;

SERREZE, HB .

RADIATION EFFECTS LETTERS, 1981, 58 (3-4) :115-117

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