ELECTRON-BEAM-INDUCED CURRENT DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY IN MERCURY-CADMIUM-TELLURIDE

被引:16
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ARTZ, BE
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10.1063/1.335225
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O59 [应用物理学];
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页码:2886 / 2891
页数:6
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共 6 条
[1]   EXAMPLES OF IMAGE-PROCESSING USING A COMPUTER-CONTROLLED SEM [J].
ARTZ, BE .
SCANNING, 1983, 5 (03) :129-136
[2]  
Bevington PR., 2003, DATA REDUCTION ERROR
[3]   ELECTRON-BEAM-INDUCED CURRENTS IN SEMICONDUCTORS [J].
HANOKA, JI ;
BELL, RO .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1981, 11 :353-380
[4]   PERIPHERAL ELECTRON-BEAM INDUCED CURRENT RESPONSE OF A SHALLOW P-N-JUNCTION [J].
HOLLOWAY, H .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3669-3675
[5]   SPATIAL DISTRIBUTION OF EXCESS CARRIERS IN ELECTRON-BEAM EXCITED SEMICONDUCTORS [J].
KYSER, DF ;
WITTRY, DB .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (05) :733-&
[6]   INVESTIGATION OF MINORITY-CARRIER DIFFUSION LENGTHS BY ELECTRON-BOMBARDMENT OF SCHOTTKY BARRIERS [J].
WU, CJ ;
WITTRY, DB .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2827-2836