TEMPERATURE DISTRIBUTION OF SILICON-ON-INSULATOR SYSTEMS DURING RECRYSTALLIZATION PROCESSING

被引:4
作者
MIAOULIS, IN [1 ]
MIKIC, BB [1 ]
机构
[1] MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
关键词
D O I
10.1063/1.336481
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1663 / 1666
页数:4
相关论文
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[3]  
MIAOULIS I, 1984, THESIS MIT
[4]   HEAT-SOURCE POWER REQUIREMENTS FOR HIGH-QUALITY RECRYSTALLIZATION OF THIN SILICON FILMS FOR ELECTRONIC DEVICES [J].
MIAOULIS, IN ;
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