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TEMPERATURE DISTRIBUTION OF SILICON-ON-INSULATOR SYSTEMS DURING RECRYSTALLIZATION PROCESSING
被引:4
作者
:
MIAOULIS, IN
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIAOULIS, IN
[
1
]
MIKIC, BB
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIKIC, BB
[
1
]
机构
:
[1]
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
来源
:
JOURNAL OF APPLIED PHYSICS
|
1986年
/ 59卷
/ 05期
关键词
:
D O I
:
10.1063/1.336481
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1663 / 1666
页数:4
相关论文
共 4 条
[1]
USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
COLINGE, JP
;
DEMOULIN, E
论文数:
0
引用数:
0
h-index:
0
DEMOULIN, E
;
BENSAHEL, D
论文数:
0
引用数:
0
h-index:
0
BENSAHEL, D
;
AUVERT, G
论文数:
0
引用数:
0
h-index:
0
AUVERT, G
.
APPLIED PHYSICS LETTERS,
1982,
41
(04)
:346
-347
[2]
SOLIDIFICATION-FRONT MODULATION TO ENTRAIN SUBBOUNDARIES IN ZONE-MELTING RECRYSTALLIZATION OF SI ON SIO2
[J].
GEIS, MW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
GEIS, MW
;
SMITH, HI
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
SMITH, HI
;
SILVERSMITH, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
SILVERSMITH, DJ
;
MOUNTAIN, RW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MOUNTAIN, RW
;
THOMPSON, CV
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
THOMPSON, CV
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(05)
:1178
-1183
[3]
MIAOULIS I, 1984, THESIS MIT
[4]
HEAT-SOURCE POWER REQUIREMENTS FOR HIGH-QUALITY RECRYSTALLIZATION OF THIN SILICON FILMS FOR ELECTRONIC DEVICES
[J].
MIAOULIS, IN
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIAOULIS, IN
;
MIKIC, BB
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIKIC, BB
.
JOURNAL OF APPLIED PHYSICS,
1986,
59
(05)
:1658
-1662
←
1
→
共 4 条
[1]
USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
COLINGE, JP
;
DEMOULIN, E
论文数:
0
引用数:
0
h-index:
0
DEMOULIN, E
;
BENSAHEL, D
论文数:
0
引用数:
0
h-index:
0
BENSAHEL, D
;
AUVERT, G
论文数:
0
引用数:
0
h-index:
0
AUVERT, G
.
APPLIED PHYSICS LETTERS,
1982,
41
(04)
:346
-347
[2]
SOLIDIFICATION-FRONT MODULATION TO ENTRAIN SUBBOUNDARIES IN ZONE-MELTING RECRYSTALLIZATION OF SI ON SIO2
[J].
GEIS, MW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
GEIS, MW
;
SMITH, HI
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
SMITH, HI
;
SILVERSMITH, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
SILVERSMITH, DJ
;
MOUNTAIN, RW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MOUNTAIN, RW
;
THOMPSON, CV
论文数:
0
引用数:
0
h-index:
0
机构:
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA
THOMPSON, CV
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(05)
:1178
-1183
[3]
MIAOULIS I, 1984, THESIS MIT
[4]
HEAT-SOURCE POWER REQUIREMENTS FOR HIGH-QUALITY RECRYSTALLIZATION OF THIN SILICON FILMS FOR ELECTRONIC DEVICES
[J].
MIAOULIS, IN
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIAOULIS, IN
;
MIKIC, BB
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
MIKIC, BB
.
JOURNAL OF APPLIED PHYSICS,
1986,
59
(05)
:1658
-1662
←
1
→