ZNO TRANSDUCERS ON INSB FOR LOW-TEMPERATURE ULTRASONICS

被引：5

作者：

CASTONGUAY, M ^{[1
]}

FERNANDEZ, B ^{[1
]}

GUILLON, F ^{[1
]}

CHEEKE, JDN ^{[1
]}

机构：

[1] UNIV SHERBROOKE,CTR RECH PHYS SOLIDE,SHERBROOKE J1K 2R1,QUEBEC,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 11期

关键词：

D O I：

10.1063/1.338303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5199 / 5201

页数：3

共 10 条

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[6] ULTRASONIC-ATTENUATION AND ELECTRICAL-RESISTIVITY IN P-INSB AT LOW-TEMPERATURES AND HIGH MAGNETIC-FIELDS [J].

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[7] EFFECTS OF A MAGNETIC-FIELD ON THE ULTRASONIC-ATTENUATION AND RESISTIVITY OF HIGH-PURITY N-TYPE INSB AT LOW-TEMPERATURES [J].

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[8]

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[9]

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[10]

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