BIMETALLIC FE/GA THIN-FILMS FROM SINGLE SOURCES - MOLECULAR CONTROL OF THE THIN-FILM STOICHIOMETRY

被引：26

作者：

FISCHER, RA

MIEHR, A

SCHULTE, MM

机构：

[1] Anorganisch-chemisches Institut, Technischen Universität München, Garching, D-85747

来源：

ADVANCED MATERIALS | 1995年 / 7卷 / 01期

关键词：

D O I：

10.1002/adma.19950070113

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Communication: Single source CVD precursors for FeGa thin films (e.g. see Fig.) are reported. The precursors are volatile, give clean deposits, and allow the use of unprecedented mild deposition conditions, at temperatures well below the decomposition temperature of the GaAs substrate. It is also shown that single-source precursors for binary materials should be designed with the strongest bond joining the atoms which make up the final material.

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页码：58 / 61

页数：4

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