CARBON CONTAMINATION DURING GROWTH OF CZOCHRALSKI SILICON

被引：8

作者：

SERIES, RW

BARRACLOUGH, KG

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(82)90091-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：212 / 218

页数：7

共 12 条

[1] BAKER JA, 1969, SEMICONDUCTOR SILICO
[2] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL
BURTON, JA
PRIM, RC
SLICHTER, WP
[J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) : 1987 - 1991
[3] CARRUTHERS JR, 1977, ELECTROCHEM SOC P, V772
[4] The flow due to a rotating disc.
Cochran, WG
[J]. PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1934, 30 : 365 - 375
[5] EQUILIBRIUM OF CARBON AND OXYGEN IN SILICON WITH CARBON-MONOXIDE IN AMBIENT ATMOSPHERE
ENDO, Y
YATSURUGI, Y
TERAI, Y
NOZAKI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1422 - 1425
[6] HEAT-TREATMENT BEHAVIOR OF MICRODEFECTS AND RESIDUAL IMPURITIES IN CZ SILICON-CRYSTALS
KISHINO, S
KANAMORI, M
YOSHIHIRO, N
TAJIMA, M
IIZUKA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8240 - 8243
[7] LIAW HM, 1979, SEMICONDUCTOR IN OCT, P71
[8] MODULATION OF DOPANT SEGREGATION BY ELECTRIC CURRENTS IN CZOCHRALSKI-TYPE CRYSTAL GROWTH
LICHTENSTEIGER, M
WITT, AF
GATOS, HC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 1013 - +
[9] BEHAVIOR OF LIGHT IMPURITY ELEMENTS IN PRODUCTION OF SEMICONDUCTOR SILICON
NOZAKI, T
YATSURUG.Y
AKIYAMA, N
ENDO, Y
MAKIDE, Y
[J]. JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1974, 19 (01): : 109 - 128
[10] SERIES RW, UNPUB