STUDY OF THE ELECTRONIC-STRUCTURE OF IRON SILICIDES GROWN ON SI(100)2X1 BY REACTIVE DEPOSITION EPITAXY

We have studied the growth of iron silicides on Si(100)2 X 1 by reactive deposition epitaxy. The electronic structure of the surface was monitored with ultraviolet photoelectron spectroscopy during the growth process, while the atomic stoichiometry was determined by X-ray photoelectron spectroscopy. The characteristic features observed in the density of states at the different stages of growth allow us to determine the appearance and the stability range of each silicide. By selecting an adequate temperature range it is possible to directly grow a certain phase on the Si substrate. In addition the sharpness of the features was used to estimate the crystalline quality of the films.